NAND04GW3B2BN6E

NAND04GW3B2BN6E, NAND Flash Memory, TSOP, -0.6 to 4.6 V, STMicroelectronics

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Price:: US $5.60~5.60 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 155 :	5.60 / Piece

PartNumber:: NAND04GW3B2BN6E

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 08+

Availability:: Supply Ability: 0/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-05-10

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Part Number:NAND04GW3B2BN6E
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Product Summary

The NAND04GW3B2BN6E is a NAND Flash Memory. The NAND04GW3B2BN6E is a family of non-volatile Flash memories that uses NAND cell technology. The device is a density of 4 Gbits and 8 Gbits, respectively. The device operates from a 3V voltage supply. The size of a Page is 2112 Bytes (2048 + 64 spare). The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 Input/Output bus.

Parametrics

NAND04GW3B2BN6E absolute maximum ratings: (1)TBIAS, Temperature Under Bias: -50 to 125℃; (2)TSTG, Storage Temperature: -65 to 150℃; (3)VIO, Input or Output Voltage: -0.6 to 4.6 V; (4)VDD, Supply Voltage: -0.6 to 4.6 V.

Features

NAND04GW3B2BN6E features: (1)High density NAND Flash Memory, up to 8 Gbit memory array; Up to 256 Mbit spare area; Cost effective solution for mass storage; (2)applications; (3)NAND Interface, x8 bus width; Multiplexed Address/ Data; (4)Supply voltage, 3.0V device: VDD = 2.7 to 3.6V; (5)Page size, (2048 + 64 spare) Bytes; (6)Block size, (128K + 4K spare) Bytes; (7)Page Read/Program, Random access: 25μs (max); Sequential access: 30ns (min); Page program time: 200μs (typ); (8)Copy Back Program mode, Fast page copy without external buffering; (9)Cache Program and Cache Read modes, Internal Cache Register to improve the program and read throughputs.