(Hong Kong)
Product Summary
The K6F2016U4E-EF55 is a 128K x16 bit super low power and low voltage full CMOS static RAM. The K6F2016U4E-EF55 is fabricated by SAMSUNG advanced full CMOS process technology. The K6F2016U4E-EF55 supports industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6F2016U4E-EF55 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.2 to VCC+0.3V V; (2)Voltage on Vcc supply relative to Vss VCC: -0.2 to 3.6V V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature TSTG: -65 to 150 ℃; (5)Operating Temperature TA: -40 to 85 ℃.
Features
K6F2016U4E-EF55 features: (1)Process Technology: Full CMOS; (2)Organization: 128K x16 bit; (3)Power Supply Voltage: 2.7~3.3V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three State Outputs; (6)Package Type: 48-TBGA-6.00x7.00.
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