(Hong Kong)
Product Summary
The M29F016D-70N6 is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. The M29F016D-70N6 is divided into 32 uniform blocks of 64Kbytes that can be erased independently so it is possible to preserve valid data while old data is erased. An on-chip Program/Erase Controller simplifies the process of programming or erasing the M29F016D-70N6 by taking care of all of the special operations that are required to update the memory contents.
Parametrics
M29F016D-70N6 absolute maximum ratings: (1)Temperature Under Bias:–50℃ to 125℃; (2)Storage Temperature:–65℃ to 150℃; (3)Input or Output Voltage:–0.6V to VCC + 0.6V; (4)Supply Voltage:–0.6V to 6V; (5)Identification Voltage:–0.6V to 13.5V.
Features
M29F016D-70N6 features: (1)supply voltage: VCC = 5V±10% for PROGRAM, ERASE and read operations; (2)access time: 55, 70, 90ns; (3)programming time: 10μs per Byte typical; (4)32 uniform 64Kbyte memory blocks; (5)program/erase controller: embedded byte program algorithms; (6)erase suspend and resume modes: read and program another block during; (7)Erase Suspend; (8)unlock bypass program command: Faster Production/Batch Programming; (9)temporary block unprotection mode; (10)common flash interface:64 bit Security Code; (11)low power consumption:Standby and Automatic Standby; (12)100,000 program/erase cycles per block; (13)electronic signature: Manufacturer Code: 20h, Device Code: ADh.
Diagrams
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 M29F002B |
Other |
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Data Sheet |
Negotiable |
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M29F002BB |
Other |
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Data Sheet |
Negotiable |
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M29F002BB70K1 |
STMicroelectronics |
Flash 2M (256Kx8) 70ns |
Data Sheet |
Negotiable |
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M29F002BB70K6 |
STMicroelectronics |
Flash 2M (256Kx8) 70ns |
Data Sheet |
Negotiable |
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M29F002BB70K6E |
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IC FLASH 2MBIT 70NS 32PLCC |
Data Sheet |
Negotiable |
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M29F002BB70N1 |
STMicroelectronics |
Flash 2M (256Kx8) 70ns |
Data Sheet |
Negotiable |
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